Effect of bias on radiation-induced paramagnetic defects at the silicon-silicon dioxide interface

Abstract

Electron spin resonance measurements have been made on gamma-irradiated (111) Si/SiO2 structures as a function of bias across the oxide. We observe a large change in the density of radiation-induced paramagnetic Pb centers with bais. We conclude that Pb defects (trivalent silicons at the Si/SiO2 interface) account for a very large portion of the radiation-induced interface states.