Hot Hole Degradation Effects in Lateral nDMOS Transistors

Abstract

The degradation of a n-type lateral DMOS transistor is shown to be related to the injection of hot holes in the drift region field oxide. The saturation effects observed in the parameter shifts are reproduced by a new degradation model using the bulk current as the driving force. The dependency of the hot hole injection on the layout of the LDMOS transistors is studied.