Semiconductor Science and Technology · 2003 · 12 citations · 36 references
EngineeringMaterials SciencePhysicsElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDopingMetal-semiconductor ContactsSemiconductor DefectsSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesConduction BandFermi LevelFermi Level PinningMetal-semiconductor InterfacesSchottky Barrier DiodesSchottky BarriersSchottky ContactsSputter Deposition
Schottky barrier diodes are made by ac magnetron deposition of Au on p-type GaAs substrates. Sputtering causes donor-like defects in the surface region of semiconductors, and these donor-like states compensate mostly the Zn shallow acceptor states over distances of 200 nm below the surface. These defects are attributed to the As Frenkel pairs VAs?Asi with an energy level at 0.27 eV below the conduction band. The As Frenkel pairs are responsible for the Fermi level pinning at metal?semiconductor interfaces and also for the observed change in barrier height in sputtered GaAs material.
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Schottky Barrier Heights and the Continuum of Gap States
J. Tersoff · Physical Review Letters · 1984 · 1.4K citations
Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States
W. E. Spicer, I. Lindau, Perry Skeath et al. · Physical Review Letters · 1980 · 725 citations