Journal of Electronic Materials · 1974 · 34 citations · 67 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsCompound SemiconductorsSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor HeterostructuresWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsGallium ArsenideGallium Arsenide Crystal GrowthGallium Arsenide Field-effect TransistorsGallium OxideLiquid Phase Epitaxy
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Optical Processes in Semiconductors
J. I. Pánkové, D. A. Kiewit · Journal of The Electrochemical Society · 1972 · 4.6K citations
JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE
I. Hayashi, M. B. Panish, P. W. Foy et al. · Applied Physics Letters · 1970 · 591 citations
Infrared Transmission and Fluorescence of Doped Gallium Arsenide
D. E. Hill · Physical Review · 1964 · 211 citations
Optical waveguides in GaAs–AlGaAs epitaxial layers
R. A. Logan, F. K. Reinhart · Journal of Applied Physics · 1973 · 167 citations
Optically pumped GaAs surface laser with corrugation feedback
M. Nakamura, A. Yariv, H. W. Yen et al. · Applied Physics Letters · 1973 · 159 citations