Applied Physics Letters · 1966 · 62 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsAvalanche ProcessesDevice ModelingMos CapacitorsP-n JunctionsSemiconductor ReliabilityAvalanche BreakdownAvalanche DynamicsBreakdown MechanismsBreakdown VoltageCapacitanceJunction BreakdownJunction CapacitanceP-n Junction Characteristics
Rapid generation of minority carriers under transient bias conditions is shown to occur by means of avalanche breakdown in an MIS capacitor. Capacitance vs pulse bias follows a 1/C2 law and saturates at a low value at the avalanche voltage. Breakdown fields and voltages in general agreement with those found in step p-n junctions for Si and GaAs are measured.
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