C. Jund

Influence of illumination on MIS capacitances in the strong inversion region

J. Grosvalet, C. Jund · IEEE Transactions on Electron Devices · 1967 · 74 citations

Electrical Engineering, Engineering, Physics +9

Carrier concentration and minority carrier lifetime measurement in semiconductor epitaxial layers by the mos capacitance method

C. Jund, R. Poirier · Solid-State Electronics · 1966 · 58 citations

Electrical Engineering, Engineering, Semiconductor Epitaxial Layers +7

Experimental study of semiconductor surface conductivity

J. Grosvalet, C. Jund, C. Motsch et al. · Surface Science · 1966 · 52 citations

Semiconductors, Electrical Engineering, Engineering +6

Electrical properties of silicon doped with platinum

H. Carchano, C. Jund · Solid-State Electronics · 1970 · 43 citations

Materials Science, Engineering, Applied Physics +4

Temperature dependence of apparent threshold voltage of silicon MOS transistors at cryogenic temperatures

H.C. Nathanson, C. Jund, J. Grosvalet · IEEE Transactions on Electron Devices · 1968 · 15 citations

Device Modeling, Silicon Mos Transistors, Electrical Engineering +14