Propagation of stacking faults from surface damage in SiC PiN diodes

Abstract

The propagation of stacking faults (SF) in SiC PiN diodes under forward bias was studied by the electron beam induced current mode of scanning electron microscopy. The primary SF nucleation sites were confirmed to be pre-existing basal plane dislocations (BPD). Damage to the diode surface can also cause SF propagation in the device. Hence, in addition to the elimination of BPDs in the active layer of the diode, avoidance of surface damage by paying careful attention to device processing and testing is also important for fabricating stable SiC PiN diodes.