Structure and Frequency Dependence of Hot-Carrier-Induced Degradation in CMOS VLSI

Abstract

When the p-channel MOSFET is stressed near the maximum substrate current Isub, the lifetime t follows t = A(l/Isub)(Isub/Id)-2 Experimental data show that the surface-channel PMOS transistor has more severe hot-carrier-induced degradation than the buried-channel transistor. Results of DC stress and AC stress (pulsed gate) in NMOS transistors are compared. The device lifetime under DC and AC stresses shows different Isub dependence.