Solid State Reaction of Mo on Cubic and Hexagonal SiC

Abstract

Mo/3C-SiC and Mo/6H-SiC interfaces have been investigated by Auger electron spectroscopy, Rutherford backscattering spectroscopy, X-ray diffraction, and transmission electron microscopy. High temperature annealing at 1200°C for 1 hour caused a reaction at the interfaces, resulting in forming a Mo 2 C/Mo 5 Si 3 /SiC multilayer. We have found that SiC poly-typism (3C or 6H) and Mo deposition process (evaporation or sputter deposition) make no influence in forming the multilayer. The diffusion mechanism at the Mo/SiC interface will be discussed.