Atomic Layer Deposition of Aluminum Oxide Thin Films from a Heteroleptic, Amidinate-Containing Precursor

Abstract

A family of heteroleptic aluminum compounds were synthesized as potential precursors for aluminum oxide deposition by atomic layer deposition (ALD). The synthesis and thermal chemistry were considered in the context of precursor selection, and [MeC(N i Pr) 2 ]AlEt 2 was selected as a precursor. It was used to deposit aluminum oxide with a high growth rate (2.3−2.7 Å/cycle) at 175 °C, and the films were found to be uniform and smooth (4.71 Å rms roughness).