Applied Physics Letters · 2013 · 48 citations · 31 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsMemristive MaterialsMetal OxidesNanoelectronicsOxide SemiconductorsSemiconductor Device MaterialsSemiconductor SurfacesCurrent-voltage CharacterizationCurrent-voltage RelationsCurrent-voltage RelationshipOxygen VacanciesOxygen Vacancies In Metal OxidesResistive SwitchingSpace-charge-limited CurrentTitanium Oxides
Nanoscale multilayer structure TiO2/BaTiO3/TiO2 has been fabricated on Pt/Ti/SiO2/Si substrate by chemical solution deposition method. Highly uniform bipolar resistive switching (BRS) characteristics have been observed in Pt/TiO2/BaTiO3/TiO2/Pt cells. Analysis of the current-voltage relationship demonstrates that the space-charge-limited current conduction controlled by the localized oxygen vacancies should be important to the resistive switching behavior. X-ray photoelectron spectroscopy results indicated that oxygen vacancies in TiO2 play a crucial role in the resistive switching phenomenon and the introduced TiO2/BaTiO3 interfaces result in the high uniformity of bipolar resistive switching characteristics.
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Nanoionics-based resistive switching memories
Rainer Waser, Masakazu Aono · Nature Materials · 2007 · 4.8K citations
Natural Sciences, Materials Engineering, Materials Science +12
Resistive switching in transition metal oxides
Akihito Sawa · Materials Today · 2008 · 2.9K citations · Full text