Applied Physics Letters · 1987 · 54 citations · 12 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsEpitaxial GrowthIii-v SemiconductorsSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor SurfacesTwo-dimensional SemiconductorsElectron MobilityEpitaxial Film GrowthEpitaxial Thin-film GrowthExciton PhysicsMolecular Beam EpitaxyPhotoluminescencePhotoluminescence Spectroscopy
Device quality (110)GaAs has been reproducibly grown by molecular beam epitaxy (MBE) for the first time. Angling of the substrate to expose stable, Ga-rich ledges on the (110) surface has been shown to be the necessary condition for two-dimensional growth. The layers exhibit a room-temperature electron mobility of ∼5700 cm2/V s for NSi∼4×1015 and a strong exciton photoluminescence emission at 4 K. This breakthrough in MBE growth of III-V compounds allows for fabrication of (110) GaAs devices which will take advantage of the unique properties of this orientation.
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A.Y. Cho, John R. Arthur · Progress in Solid State Chemistry · 1975 · 1.2K citations
Symmetric arsenic dimers on the Si(100) surface
R. I. G. Uhrberg, R. D. Bringans, R. Z. Bachrach et al. · Physical Review Letters · 1986 · 226 citations