Inequivalent atoms and imaging mechanisms in ac-mode atomic-force microscopy of Si(111)7×7

Abstract

ac-mode atomic-force microscopy (AFM) has been used to image the Si(111)7\ifmmode\times\else\texttimes\fi{}7 reconstruction. The corner holes and adatoms in the 7\ifmmode\times\else\texttimes\fi{}7 unit cell as well as isolated atomic defects are clearly resolved. In addition, we observe a contrast between inequivalent adatoms, the center adatoms appearing 0.13 \AA{} higher than the corner adatoms. We show that AFM does not image the true atom positions nor the charge density in the dangling bonds. Rather, our data suggest that the contrast is due to a variation in the chemical reactivity of the adatoms or to a tip-induced atomic-relaxation effect reflecting the stiffness of the surface lattice.