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Structural analysis of Si(111)-7×7 by UHV-transmission electron diffraction and microscopy
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1985
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Materials ScienceSurface CharacterizationEngineeringElectron MicroscopyCrystalline DefectsMicroscopyUltrahigh VacuumTriangular SubunitsSurface ScienceApplied PhysicsTed Intensity AnalysisStructural AnalysisSiliceneSurface AnalysisElectron DiffractionSilicon On InsulatorCrystallographySurface Reconstruction
Structural analysis of the surface reconstructions investigated by ultrahigh vacuum (UHV) transmission electron microscopy (TEM) and diffraction (TED) is shown. By TED intensity analysis a new structural model of Si(111)-7×7 is derived. The model basically consists of 12 adatoms arranged locally in the 2×2 structure, nine dimers on the sides of the triangular subunits of the 7×7 unit cell and a stacking fault layer. UHV–HREM of Si (111)-7×7 surface is commented.