Etched buried heterostructure GaAs/GaAlAs injection lasers

Abstract

An injection laser is described in which a semicircular GaAs active region is completely surrounded by Ga1−xAlxAs by using selective etching and a single liquid-phase epitaxial growth.The active region dimensions can be made much more symmetric than those obtained with conventional stripe geometry lasers resulting in improved optical characteristics and low room-temperature threshold currents.