Nucleation and Adhesion of ALD Copper on Cobalt Adhesion Layers and Tungsten Nitride Diffusion Barriers

Abstract

Atomic layer deposition (ALD) was used to make conformal diffusion barrier layers of WN, adhesion layers of Co, and seed layers of Cu. Transmission electron microscopy and atomic force microscopy were used to study the nucleation of these layers. WN and Co nucleated uniformly as continuous layers. Cu nucleated as discontinuous islands on , , and WN, but as a continuous, nanocrystalline layer on . Electrical continuity was found for layers with a thickness under 2 nm. Extremely strong adhesion was measured for the structure, more than five times higher than the structures currently used for interconnects.