Impact of negative bias temperature instability on digital circuit reliability

The impact of intrinsic device fluctuations on CMOS SRAM cell stability

A.J. Bhavnagarwala, Xinghai Tang, J.D. Meindl · IEEE Journal of Solid-State Circuits · 2001 · 685 citations

Engineering, Computer Engineering, Electrical Engineering +17

Charge pumping in MOS devices

J.S. Brugler, P.G.A. Jespers · IEEE Transactions on Electron Devices · 1969 · 499 citations

Engineering, Electrical Engineering, Materials Science +17

A critical examination of the mechanics of dynamic NBTI for PMOSFETs

M. A. Alam · 2004 · 320 citations

Engineering, Electrical Engineering, Microelectronics +16

Dynamic NBTI of PMOS transistors and its impact on device lifetime

G. Chen, K.Y. Chuah, M.F. Li et al. · 2003 · 192 citations

Engineering, Computer Engineering, Electrical Engineering +17

Dynamic recovery of negative bias temperature instability in <i>p</i>-type metal–oxide–semiconductor field-effect transistors

M. Ershov, Sharad Saxena, H. Karbasi et al. · Applied Physics Letters · 2003 · 161 citations

Engineering, Electrical Engineering, Microelectronics +15