Applied Physics Letters · 2001 · 80 citations · 11 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsNanoelectronicsNoise In Electronic DevicesNoise In Semiconductor DevicesQuantum TunnelingSemiconductor PhysicsTransistor BiasingBias Drift AnalysisElectron TunnelingShort-term Noise MeasurementSingle-electron TransistorsTunneling CurrentTunneling Field-effect TransistorsTunneling In SemiconductorsTunneling Phenomena
We have measured the long-term drift and the short-term 1/f noise in the charge offset Q0(t) in two Si-based single-electron tunneling transistors (SETTs). In contrast to metal-based SETTs, these devices show excellent charge stability, drifting by less than 0.01e over weeks. The short-term 1/f noise magnitude is similar to the metal-based devices, demonstrating that different mechanisms are responsible for the short-term noise versus the long-term drift. Finally, we show that, in addition to the excellent stability over time, it may be possible to make the devices more robust with respect to voltage-induced instability as well.
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Background charge noise in metallic single-electron tunneling devices
A. B. Zorin, F. J. Ahlers, J. Niemeyer et al. · Physical review. B, Condensed matter · 1996 · 249 citations
Noise in the Coulomb blockade electrometer
Gregory A. Zimmerli, Travis M. Eiles, R. L. Kautz et al. · Applied Physics Letters · 1992 · 188 citations