Single-electron Transistors

Single-Electron Transistor is a nanoscale electronic device that functions as a switching element based on the controlled tunneling of individual electrons through quantum dots, distinguished from conventional transistors by its reliance on Coulomb blockade effects to achieve precise single-electron charge control.

1.2K

Publications

79.3K

Citations

3K

Authors

716

Institutions

Publications per year

2017–2026

107

Variants

SetSingle-electron Transistor

Authors

3K

  1. YT
    Yasuo Takahashi

    NTT Basic Research Laboratories, Japan

    48 publications · 2.6K citations

    26

    h-index

  2. AF
    Akira Fujiwara

    NTT Basic Research Laboratories, Japan

    30 publications · 1.5K citations

    21

    h-index

  3. PD
    Per Delsing

    Chalmers University of Technology, Sweden

    22 publications · 1.9K citations

    19

    h-index

  4. TH
    Toshiro Hiramoto

    The University of Tokyo, Japan

    26 publications · 991 citations

    18

    h-index

  5. HI
    Hiroshi Inokawa

    NTT Basic Research Laboratories, Japan

    23 publications · 1.1K citations

    18

    h-index

1–5 of 3K

Venues

  1. Applied Physics Letters

    213 publications · 11.6K citations

    59

    h-index

  2. Physical Review Letters

    PRL · 68 publications · 6.6K citations

    43

    h-index

  3. Physical Review B

    PRB · 83 publications · 3.3K citations

    34

    h-index

  4. Physical review. B, Condensed matter

    PRB · 57 publications · 3.2K citations

    29

    h-index

  5. Nano Letters

    32 publications · 3K citations

    26

    h-index

1–5