Bias Drift Analysis

Bias Drift Analysis is a methodological framework within transistor biasing that systematically evaluates the temporal and environmental variations in operating point stability to distinguish inherent circuit sensitivities from external perturbations.

85

Publications

3.3K

Citations

341

Authors

102

Institutions

Publications per year

2017–2026

20

Authors

341

  1. JC
    Jian Cui

    Peking University, China

    3 publications · 67 citations

    3

    h-index

  2. FA
    Farrokh Ayazi

    Georgia Institute of Technology, United States

    3 publications · 122 citations

    3

    h-index

  3. DP
    D. P. Edwards

    NSF National Center for Atmospheric Research, United States

    3 publications · 343 citations

    3

    h-index

  4. JC
    J. C. Gille

    NSF National Center for Atmospheric Research, United States

    3 publications · 343 citations

    3

    h-index

  5. HM
    H. M. Worden

    NSF National Center for Atmospheric Research, United States

    3 publications · 343 citations

    3

    h-index

1–5 of 341

Venues

  1. Journal of Lightwave Technology

    6 publications · 291 citations

    6

    h-index

  2. IEEE Photonics Technology Letters

    IPTEL · 4 publications · 57 citations

    4

    h-index

  3. Micromachines

    4 publications · 99 citations

    4

    h-index

  4. Sensors and Actuators B Chemical

    3 publications · 280 citations

    3

    h-index

  5. 3

    h-index

1–5