Etching effect on metal-organic molecular-beam epitaxy growth of GaSb using triethylgallium and trisdimethylaminoantimony

Abstract

Metal-organic molecular-beam epitaxy growth of GaSb is investigated for the first time by using the new precursor trisdimethylaminoantimony (TDMASb) together with triethylgallium (TEGa). An etching effect is observed when TDMASb is supplied to the (001) GaSb surface without precracking. The etching rate is dependent on the substrate temperature and TDMASb flow rate, while independent of the TEGa flow rate. GaSb layers can be grown when the TDMASb is precracked in the gas cracker cell. The etching mechanism is discussed in connection with the decomposition process of TDMASb on the surface.