Alternative group V sources for growth of GaAs and AlGaAs by MOMBE (CBE)

Metalorganic molecular beam epitaxy of InP, Ga0.47In0.53As, and GaAs with tertiarybutylarsine and tertiarybutylphosphine

D. Ritter, M. B. Panish, R. A. Hamm et al. · Applied Physics Letters · 1990 · 61 citations

Engineering, Materials Science, Physics +14

Effect of source chemistry and growth parameters on AlGaAs grown by metalorganic molecular beam epitaxy

C. R. Abernathy, S. J. Pearton, F. A. Baiocchi et al. · Journal of Crystal Growth · 1991 · 42 citations

Natural Sciences, Materials Science, Biofertilizers +2

Trisdimethylaminoarsine as As source for the LP-MOVPE of GaAs

Manuel Zimmer, R. Hövel, W. Brysch et al. · Journal of Crystal Growth · 1991 · 35 citations

Engineering, Materials Engineering, Materials Science +9

Alternative precursors for III–V MOVPE criteria for evaluation

A. Brauers · Journal of Crystal Growth · 1991 · 29 citations

Engineering, Materials Engineering, Materials Science +4

Carbon and tin doped <i>npn</i> and <i>pnp</i> AlGaAs/GaAs HBTs grown by MOMBE

F. Ren, C. R. Abernathy, S. J. Pearton et al. · Electronics Letters · 1991 · 28 citations

Engineering, Electrical Engineering, Materials Science +16