Performance of molecular-beam epitaxy-grown midwave infrared HgCdTe detectors on four-inch Si substrates and the impact of defects

Effect of dislocations on the electrical and optical properties of long-wavelength infrared HgCdTe photovoltaic detectors

S. M. Johnson, David R. Rhiger, J. P. Rosbeck et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1992 · 205 citations

Optical Materials, Engineering, Photovoltaics +20

<title>Narrow-gap semiconductor photodiodes</title>

Antoni Rogalski, Manijeh Razeghi · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1998 · 154 citations

Semiconductors, Ir Detector Research, Electrical Engineering +14

Fabrication of high-performance large-format MWIR focal plane arrays from MBE-grown HgCdTe on 4″ silicon substrates

J. B. Varesi, R. E. Bornfreund, A. C. Childs et al. · Journal of Electronic Materials · 2001 · 58 citations

Mbe-grown Hgcdte, Electrical Engineering, Wafer Scale Processing +7

Planar p-on-n HgCdTe heterostructure infrared photodiodes on Si substrates by molecular beam epitaxy

Nibir K. Dhar, M. Zandian, J. G. Pasko et al. · Applied Physics Letters · 1997 · 47 citations · Full text

Semiconductors, Cdte Buffer Layers, Electrical Engineering +15

Direct growth of CdZnTe/Si substrates for large-area HgCdTe infrared focal plane arrays

S. M. Johnson, T. J. de Lyon, C. A. Cockrum et al. · Journal of Electronic Materials · 1995 · 39 citations

Ii-vi Semiconductor, Electrical Engineering, Engineering +11