Applied Physics Letters · 1997 · 47 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsP-n JunctionsPhotodetectorsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsWide Band Gap SemiconductorsBuffer LayersDevice FabricationHeterostructure DevicesHeterostructure PhotodetectorsHeterostructuresMolecular Beam EpitaxyPhotodetectionSilicon Wafers
We have developed a low temperature procedure for molecular beam epitaxy of CdTe buffer layers on {211} Si wafers and have used Si/ZnTe/CdTe composite substrates for molecular beam epitaxy of double layer Hg1−xCdxTe heterostructures. Planar p-on-n double layer heterostructures were formed by an implantation technique and test diodes were fabricated and characterized. At 77 K, devices with 30×30 μm2 junction area had R0A values in the range 1.5×106–1×107Ω cm2 with a uniform cut-off wavelength of 4.65 μm.
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MBE HgCdTe heterostructure p-on-n planar infrared photodiodes
J. M. Arias, J. G. Pasko, M. Zandian et al. · Journal of Electronic Materials · 1993 · 63 citations
Molecular-beam epitaxial growth of CdTe(112) on Si(112) substrates
T. J. de Lyon, D. Rajavel, S. M. Johnson et al. · Applied Physics Letters · 1995 · 57 citations