J. H. Dinan

Development of a parametric optical constant model for Hg1−xCdxTe for control of composition by spectroscopic ellipsometry during MBE growth

Blaine Johs, Craig M. Herzinger, J. H. Dinan et al. · Thin Solid Films · 1998 · 256 citations

Ii-vi Semiconductor, Optical Materials, Engineering +11

A novel simultaneous unipolar multispectral integrated technology approach for HgCdTe IR detectors and focal plane arrays

W. E. Tennant, M. L. Thomas, Lester J. Kozlowski et al. · Journal of Electronic Materials · 2001 · 61 citations

Engineering, Imaging Spectroscopy, Optical Properties +11

CdZnTe heteroepitaxy on 3″ (112) Si: Interface, surface, and layer characteristics

Nibir K. Dhar, P. R. Boyd, M. Martinka et al. · Journal of Electronic Materials · 2000 · 55 citations

Materials Science, Semiconductors, Oxide Heterostructures +9

Heteroepitaxy of CdTe on {211}Si substrates by molecular beam epitaxy

A. Million, Nibir K. Dhar, J. H. Dinan · Journal of Crystal Growth · 1996 · 49 citations

Materials Science, Ii-vi Semiconductor, Engineering +5

Heteroepitaxy of CdTe on {211} Si using crystallized amorphous ZnTe templates

Nibir K. Dhar, C. E. C. Wood, A.L. Gray et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1996 · 49 citations

Engineering, Crystal Growth Technology, Silicon On Insulator +18