J. H. Dinan - Concepedia

Author

J. H. Dinan

Sensors (United States)

Also Known As

J H Dinan, J. Dinan, J. H. Dinan, J.H Dinan, J.H. Dinan, JH Dinan

Publications

1.5K

Citations

H-Index

Concepts

All Affiliations

Sensors (United States)US Night Vision (United States)DEVCOM Army Research Laboratory United States Army United States Department of the Army

About

J. H. Dinan is an author at Sensors (United States) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	42	1.2K
2	Applied Physics	20	40	1.1K
3	Natural Sciences	5	5	322
4	Chemistry	5	5	323
5	Health Sciences	1	1	32

J. H. Dinan

Publications

1.3K

Citations

H-Index

Page 1

	Year	Citations
Development of a parametric optical constant model for Hg1−xCdxTe for control of composition by spectroscopic ellipsometry during MBE growth Blaine Johs, Craig M. Herzinger, J. H. Dinan, Thin Solid Films Ii-vi SemiconductorOptical MaterialsEngineeringOptical PropertiesSpectroscopy	1998	256
A novel simultaneous unipolar multispectral integrated technology approach for HgCdTe IR detectors and focal plane arrays W. E. Tennant, M. L. Thomas, Lester J. Kozlowski, Journal of Electronic Materials EngineeringImaging SpectroscopyOptical PropertiesSpectroscopyMultispectral Imaging	2001	61
CdZnTe heteroepitaxy on 3″ (112) Si: Interface, surface, and layer characteristics Nibir K. Dhar, P. R. Boyd, M. Martinka, Journal of Electronic Materials Materials ScienceSemiconductorsOxide HeterostructuresIi-vi SemiconductorEngineering	2000	55
Heteroepitaxy of CdTe on {211}Si substrates by molecular beam epitaxy A. Million, Nibir K. Dhar, J. H. Dinan Journal of Crystal Growth Materials ScienceIi-vi SemiconductorEngineeringNanotechnologyApplied Physics	1996	49
Heteroepitaxy of CdTe on {211} Si using crystallized amorphous ZnTe templates Nibir K. Dhar, C. E. C. Wood, A.L. Gray, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena EngineeringCrystal Growth TechnologySilicon On InsulatorSemiconductor NanostructuresSemiconductors	1996	49
Planar p-on-n HgCdTe heterostructure infrared photodiodes on Si substrates by molecular beam epitaxy Nibir K. Dhar, M. Zandian, J. G. Pasko, Applied Physics Letters SemiconductorsCdte Buffer LayersElectrical EngineeringElectronic DevicesEngineering	1997	47
Heteroepitaxial growth of ZnCdTe by molecular beam epitaxy J. H. Dinan, S. B. Qadri Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Materials ScienceSemiconductorsIi-vi SemiconductorEngineeringCrystalline Defects	1985	35
Effects of excess tellurium on the properties of CdZnTe radiation detectors M. Chu, Sevag Terterian, David Z. Ting, Journal of Electronic Materials Radiation DetectionPhysicsCdznte Radiation DetectorsScintillatorApplied Physics	2003	32
Long wavelength infrared, molecular beam epitaxy, HgCdTe-on-Si diode performance M. Carmody, J. G. Pasko, D. D. Edwall, Journal of Electronic Materials Electrical EngineeringEngineeringCompound SemiconductorApplied PhysicsOptoelectronics	2004	32
Characterization of cross-hatch morphology of MBE (211) HgCdTe M. Martinka, L. A. Almeida, J. D. Benson, Journal of Electronic Materials Ii-vi SemiconductorPhysicochemical AnalysisMolecular BiologyCross-hatch MorphologyMolecular Beam Epitaxy	2001	31

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