Performance of multiwafer reactor GaN MOCVD system

InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

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THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaN

H. Paul Maruska, J. J. Tietjen · Applied Physics Letters · 1969 · 1.3K citations

Engineering, Materials Engineering, Materials Science +14

Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa et al. · Japanese Journal of Applied Physics · 1995 · 1.1K citations

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Absorption, Reflectance, and Luminescence of GaN Epitaxial Layers

R. Dingle, D. D. Sell, S. E. Stokowski et al. · Physical review. B, Solid state · 1971 · 526 citations

Engineering, Materials Engineering, Materials Science +17

InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Japanese Journal of Applied Physics · 1997 · 470 citations

Engineering, Electrical Engineering, Materials Science +17