Theoretical Study of Recrystallization Process of Amorphous Ge Layer Subjected to Pulsed Excimer (XeCl) Laser Radiation

D. Klinger, J. Auleytner, D. Żymierska

Crystal Research and Technology · 1997 · 15 citations · 3 references

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Abstract

Abstract Transient temperature profiles have been studied theoretically in amorphous germanium thin films on the crystal substrate during heating by a single laser pulse. Computer calculations have been based on the Fourier equation of the heat flow. The calculated threshold value of the energy density for the melting the whole of amorphous layer have been reported for excimer laser radiation.

References

3