R. P. Gale

GaAs Shallow-homojunction solar cells on Ge-coated Si substrates

R. P. Gale, J. C. C. Fan, B-Y. Tsaur et al. · IEEE Electron Device Letters · 1981 · 85 citations

Engineering, Semiconductor Materials, Optoelectronic Devices +16

Solid-phase growth of large aligned grains during scanned laser crystallization of amorphous Ge films on fused silica

John C. C. Fan, H. J. Zeiger, R. P. Gale et al. · Applied Physics Letters · 1980 · 77 citations · Full text

Heteroepitaxy of vacuum-evaporated Ge films on single-crystal Si

B-Y. Tsaur, M. W. Geis, John C. C. Fan et al. · Applied Physics Letters · 1981 · 72 citations

Engineering, Semiconductor Materials, Optoelectronic Devices +16

Low-dislocation-density GaAs epilayers grown on Ge-coated Si substrates by means of lateral epitaxial overgrowth

B-Y. Tsaur, R.W. McClelland, John C. C. Fan et al. · Applied Physics Letters · 1982 · 71 citations

Semiconductors, Lateral Epitaxial Overgrowth, Electrical Engineering +14

Lateral epitaxial overgrowth of GaAs by organometallic chemical vapor deposition

R. P. Gale, R.W. McClelland, John C. C. Fan et al. · Applied Physics Letters · 1982 · 63 citations

Semiconductors, Materials Science, Electrical Engineering +12