R. P. Gale - Concepedia

Author

R. P. Gale

Massachusetts Institute of Technology

Also Known As

Gale, Ronald, R Gale, R. Gale, R. P. GALE, R. P. Gale, R.P. Gale, Ronald Gale, Ronald P. Gale

Publications

804

Citations

H-Index

Concepts

All Affiliations

Massachusetts Institute of Technology MIT Lincoln Laboratory Kopin Corporation (United States)Boeing (United States)

About

R. P. Gale is an author at Massachusetts Institute of Technology specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	18	603
2	Applied Physics	14	17	587
3	Electrical Engineering	11	12	391
4	Materials Science	11	12	441
5	Materials Engineering	1	1	16

R. P. Gale

Publications

690

Citations

H-Index

Page 1

	Year	Citations
GaAs Shallow-homojunction solar cells on Ge-coated Si substrates R. P. Gale, J. C. C. Fan, B-Y. Tsaur, IEEE Electron Device Letters EngineeringSemiconductor MaterialsOptoelectronic DevicesPhotovoltaicsSemiconductor Device	1981	85
Solid-phase growth of large aligned grains during scanned laser crystallization of amorphous Ge films on fused silica John C. C. Fan, H. J. Zeiger, R. P. Gale, Applied Physics Letters	1980	77
Heteroepitaxy of vacuum-evaporated Ge films on single-crystal Si B-Y. Tsaur, M. W. Geis, John C. C. Fan, Applied Physics Letters EngineeringSemiconductor MaterialsOptoelectronic DevicesSilicon On InsulatorSemiconductors	1981	72
Low-dislocation-density GaAs epilayers grown on Ge-coated Si substrates by means of lateral epitaxial overgrowth B-Y. Tsaur, R.W. McClelland, John C. C. Fan, Applied Physics Letters SemiconductorsLateral Epitaxial OvergrowthElectrical EngineeringSemiconductor TechnologyEngineering	1982	71
Lateral epitaxial overgrowth of GaAs by organometallic chemical vapor deposition R. P. Gale, R.W. McClelland, John C. C. Fan, Applied Physics Letters SemiconductorsMaterials ScienceElectrical EngineeringLateral Epitaxial OvergrowthEngineering	1982	63
Crystallization-front velocity during scanned laser crystallization of amorphous Ge films R. L. Chapman, John C. C. Fan, H. J. Zeiger, Applied Physics Letters Materials ScienceOptical MaterialsEngineeringCrystallization-front VelocityPhysics	1980	51
Solid-phase heteroepitaxy of Ge on 〈100〉Si B-Y. Tsaur, John C. C. Fan, R. P. Gale Applied Physics Letters SemiconductorsMaterials ScienceEpitaxial GrowthEngineeringCrystalline Defects	1981	33
Efficient GaAs solar cells formed by UV laser chemical doping Thomas F. Deutsch, John C. C. Fan, D. J. Ehrlich, Applied Physics Letters EngineeringOrganic Solar CellLaser ApplicationsLaser MaterialH2s Gas	1982	33
Amorphous-crystalline boundary dynamics in cw laser crystallization H. J. Zeiger, John C. C. Fan, B. J. Palm, Physical review. B, Condensed matter Materials ScienceEngineeringPhysicsCw Laser CrystallizationOptical Properties	1982	29
High-efficiency GaAs/CuInSe/sub 2/ and AlGaAs/CuInSe/sub 2/ thin-film tandem solar cells R. P. Gale, R.W. McClelland, B.D. Dingle, SemiconductorsMaterials ScienceElectrical EngineeringEngineeringGaas Top Cell	2002	23

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