Development of Coherent Extreme-Ultraviolet Scatterometry Microscope with High-Order Harmonic Generation Source for Extreme-Ultraviolet Mask Inspection and Metrology

Abstract

In extreme-ultraviolet (EUV) lithography, defect-free mask production is one of the critical issues for the high-volume manufacturing of semiconductor devices. We developed a coherent EUV scatterometry microscope (CSM), which is a simple lensless system. The CSM records diffraction from mask patterns with a charge-coupled-device (CCD) camera directly, which is illuminated with a coherent EUV light. Since a practical standalone system is required by the industry, we developed a standalone CSM system employing a high-order harmonic generation (HHG) EUV source. The 59th high-order harmonic generation of 13.5 nm wavelength is pumped by a tabletop, 6 mJ, 32 fs, Ti:sapphire laser system. The EUV output energy of 1 µW is successfully achieved. We performed the observation of an EUV mask using the HHG-CSM system. The detection limit of the line defect size is improved to 2 nm for the high output power of the HHG EUV source.