Stable Passivation Systems for GaAs Prepared by Room-Temperature Deposition of SiO₂ Films

Abstract

The 50-Hz plasma enhanced chemical vapor deposition technique allowed the deposition of high-quality SiO 2 onto GaAs at room temperature without destroying the surface structure of amorphous-As covered GaAs, resulting in the stable SiO 2 /As/GaAs passivation system. Abrupt carrier profiles were reproducibly obtained for the Si-implanted and rapid thermal annealed GaAs using this passivation system.