Growth Studies on Quaternary AlInGaN Layers for HEMT Application - Concepedia

Concepedia

Publication | Closed Access

Growth Studies on Quaternary AlInGaN Layers for HEMT Application

23

Citations

15

References

2012

Year

B. Reuters, Ada Wille, B. Holländer, E. Sakalauskas, N. Ketteniss, C. Mauder, R. Goldhahn, M. Heuken, H. Kalisch, Andrei Vescan

Journal of Electronic Materials

Materials ScienceMaterials EngineeringAluminium NitrideEngineeringApplied PhysicsQuaternary Alingan LayersCategoryiii-v Semiconductor

References

	Year	Citations

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