B. Holländer

High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer

F. Schäffler, D. Többen, H.-J. Herzog et al. · Semiconductor Science and Technology · 1992 · 276 citations

Electrical Engineering, Engineering, Sige Buffer Layer +10

Measurement of the band offsets between amorphous LaAlO3 and silicon

L. F. Edge, Darrell G. Schlom, Scott A. Chambers et al. · Applied Physics Letters · 2004 · 160 citations

Materials Science, Semiconductors, Molecular-beam Deposition +12

Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors

Stephan Wirths, A. T. Tiedemann, Z. Ikonić et al. · Applied Physics Letters · 2013 · 144 citations

Oxide Heterostructures, Heterostructure Design, Electrical Engineering +9

Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon

L. F. Edge, Darrell G. Schlom, R. T. Brewer et al. · Applied Physics Letters · 2004 · 90 citations

Engineering, Oxidation Resistance, Amorphous Lanthanum Aluminate +16

p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers

H. Hahn, B. Reuters, Alexander Pooth et al. · IEEE Transactions on Electron Devices · 2013 · 83 citations

Wide-bandgap Semiconductor, Electrical Engineering, Exceptional Performance +10