Lead chalcogenide on silicon infrared sensors: focal plane array with 96×128 pixels on active Si-chip

Hydrogen on Si: Ubiquitous surface termination after wet-chemical processing

G. J. Pietsch · Applied Physics A · 1995 · 76 citations

Natural Sciences, Materials Engineering, Materials Science +14

Infrared sensor arrays with 3-12 mu m cutoff wavelengths in heteroepitaxial narrow-gap semiconductors on silicon substrates

H. Zogg, S. Blunier, Taiki Hoshino et al. · IEEE Transactions on Electron Devices · 1991 · 75 citations

Engineering, Materials Engineering, Materials Science +17

Reduction of Threading Dislocation Densities in Heavily Lattice Mismatched PbSe on Si(111) by Glide

Paul Müller, H. Zogg, A. Fach et al. · Physical Review Letters · 1997 · 70 citations

Engineering, Materials Engineering, Materials Science +17

Structure of epitaxial PbSe grown on Si(111) and Si(100) without a fluoride buffer layer

Paul Müller, A. Fach, J. John et al. · Journal of Applied Physics · 1996 · 50 citations

Engineering, Materials Engineering, Materials Science +17

Monolithic heteroepitaxial PbTe-on-Si infrared focal plane array with 96/spl times/128 pixels

Karim Alchalabi, D. Zimin, H. Zogg et al. · IEEE Electron Device Letters · 2001 · 22 citations

Engineering, Electrical Engineering, Materials Science +17