Photovoltaic infrared sensor arrays in monolithic lead chalcogenides on silicon

H. Zogg, C. Maissen, J. Mašek, +3

Semiconductor Science and Technology

EngineeringStandard Si ChipsMbe GrowthSilicon On InsulatorPhotovoltaics +16

Infrared sensor arrays with 3-12 mu m cutoff wavelengths in heteroepitaxial narrow-gap semiconductors on silicon substrates

H. Zogg, S. Blunier, Taiki Hoshino, +3

IEEE Transactions on Electron Devices

EngineeringSilicon On InsulatorInfrared Sensor ArraysHeteroepitaxial Narrow-gap SemiconductorsSemiconductors +16

Characterization of heteroepitaxial CuIn3Se5 and CuInSe2 layers on Si substrates

Ayodhya N. Tiwari, S. Blunier, M. Filzmoser, +3

Applied Physics Letters

Materials ScienceSemiconductorsTransition Metal ChalcogenidesEngineeringCrystalline Defects +9

Molecular beam epitaxial growth of high structural perfection CdTe on Si using a (Ca,Ba)F2 buffer layer

H. Zogg, S. Blunier

Applied Physics Letters

Materials EngineeringMaterials ScienceSemiconductorsIi-vi SemiconductorEngineering +11

Direct growth of heteroepitaxial CuInSe2 layers on Si substrates

Ayodhya N. Tiwari, S. Blunier, K. Kessler, +2

Applied Physics Letters

Materials ScienceSemiconductorsEpitaxial GrowthCis GrowthChalcopyrite Crystal Structure +10

Photovoltaic infrared sensors in heteroepitaxial PbTe on Si

C. Maissen, J. Mašek, H. Zogg, +1

Applied Physics Letters

EngineeringHeteroepitaxial PbteOptoelectronic DevicesIntegrated CircuitsPhotovoltaics +14

Growth of lattice-mismatched stacked epitaxial CaF2-SrF2-BaF2 layers on (100) oriented Si substrates

S. Blunier, H. Zogg, H. Weibel

Applied Physics Letters

EngineeringEpitaxial BuffersSilicon On InsulatorSemiconductorsNanoelectronics +15

Thermal-mismatch strain relaxation mechanisms in heteroepitaxial lead chalcogenide layers on Si substrates

H. Zogg, C. Maissen, S. Blunier, +4

Semiconductor Science and Technology

Materials ScienceMaterials EngineeringIi-vi SemiconductorEngineeringDislocation Interaction +12

Heteroepitaxial Pb1−<i>x</i>Sn<i>x</i>Se on Si infrared sensor array with 12 μm cutoff wavelength

H. Zogg, C. Maissen, J. Mašek, +3

Applied Physics Letters

Optical MaterialsEngineeringSensor ArrayμM Cutoff WavelengthOptoelectronic Devices +23

Molecular beam epitaxial growth of (100) oriented CdTe on Si (100) using BaF2-CaF2 as a buffer

Ayodhya N. Tiwari, W. Floeder, S. Blunier, +2

Applied Physics Letters

Materials ScienceSemiconductorsIi-vi SemiconductorEngineeringElectronic Materials +11