Applied Physics Letters · 1986 · 55 citations · 13 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsEpitaxial GrowthSemiconductor Crystal GrowthSemiconductor PhysicsSemiconductor SurfacesSemiconductor Thin FilmsSilicon MaterialsEpitaxial Film GrowthEpitaxial MaterialsLattice MismatchMolecular Beam EpitaxyPhotoluminescencePhotoluminescence SpectroscopySpecular ReflectionX-ray Emission Lines
Epitaxial CdTe has been grown onto Si(111) by molecular beam epitaxy (MBE) with the aid of a graded CaF2-BaF2 buffer layer. The buffer of ∼2000 Å thickness was used to overcome the large lattice mismatch of 19%; it was deposited by MBE in a separate system. The ∼10-μm-thick CdTe films exhibited specular surfaces and showed strong photoluminescence. The width of the near-band-edge peak at 77 K was 12 meV, and (333) x-ray lines were about 80 arc s wide. These values indicate a high structural quality, comparable to well-known CdTe layers on alternate substrates like GaAs, InSb, or sapphire.
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High quality CdTe epilayers on GaAs grown by hot-wall epitaxy
D. Schikora, H. Sitter, J. Humenberger et al. · Applied Physics Letters · 1986 · 62 citations
Growth of CdTe films on silicon by molecular beam epitaxy
Y. C. Lo, R. N. Bicknell, T. H. Myers et al. · Journal of Applied Physics · 1983 · 52 citations
Natural Sciences, Materials Engineering, Materials Science +17