J. John

Reduction of Threading Dislocation Densities in Heavily Lattice Mismatched PbSe on Si(111) by Glide

Paul Müller, H. Zogg, A. Fach et al. · Physical Review Letters · 1997 · 70 citations

Materials Engineering, Materials Science, Semiconductors +14

On the blistering of atomic layer deposited Al<inf>2</inf>O<inf>3</inf> as Si surface passivation

Bart Vermang, Hans Goverde, Anne Lorenz et al. · 2011 · 51 citations

Materials Science, Partial Delamination, Gas Barrier +12

Structure of epitaxial PbSe grown on Si(111) and Si(100) without a fluoride buffer layer

Paul Müller, A. Fach, J. John et al. · Journal of Applied Physics · 1996 · 50 citations

Materials Science, Semiconductors, Ii-vi Semiconductor +13

Blistering in ALD Al2O3 passivation layers as rear contacting for local Al BSF Si solar cells

Bart Vermang, Hans Goverde, A. Urueña et al. · Solar Energy Materials and Solar Cells · 2012 · 43 citations

Materials Science, Aluminium Nitride, Engineering +5

Spatially separated atomic layer deposition of Al₂O₃, a new option for high‐throughput Si solar cell passivation

Bart Vermang, A. Rothschild, A. Rácz et al. · Progress in Photovoltaics Research and Applications · 2011 · 41 citations · Full text

Aluminium Nitride, Engineering, Chemical Deposition +16