Ultralow-Voltage Solution-Processed Organic Transistors With Small Gate Dielectric Capacitance

Abstract

In this letter, ultralow-operation-voltage (<; 2 V) solution-processed organic thin-film transistors were achieved at small gate dielectric capacitance of only 12.2 nF/cm 2 in the bottom-gate bottom-contact configuration. In the devices, 6,13-bis(triisopropylsilylethynyl)-pentacene blended with polystyrene was used as the channel layer, and ultraviolet cross-linked polyvinyl alcohol was used as the gate dielectric layer. The maximum processing temperature was 100 ° C. The devices showed promising performance with a mobility value of about 1.0 cm 2 /( V·s), a subthreshold swing of about 100 mV/dec, and negligible hysteresis. The mechanism of achieving such a low operation voltage without needing large gate dielectric capacitance for the devices was discussed.

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