Ultralow-Voltage Solution-Processed Organic Transistors With Small Gate Dielectric Capacitance

Abstract

In this letter, ultralow-operation-voltage (<; 2 V) solution-processed organic thin-film transistors were achieved at small gate dielectric capacitance of only 12.2 nF/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> in the bottom-gate bottom-contact configuration. In the devices, 6,13-bis(triisopropylsilylethynyl)-pentacene blended with polystyrene was used as the channel layer, and ultraviolet cross-linked polyvinyl alcohol was used as the gate dielectric layer. The maximum processing temperature was 100 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">°</sup> C. The devices showed promising performance with a mobility value of about 1.0 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /( V·s), a subthreshold swing of about 100 mV/dec, and negligible hysteresis. The mechanism of achieving such a low operation voltage without needing large gate dielectric capacitance for the devices was discussed.