Solution Processable Low‐Voltage Organic Thin Film Transistors with High‐<i>k</i> Relaxor Ferroelectric Polymer as Gate Insulator

Abstract

A relaxor ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene-chlorofloroethylene) exhibits a high relative dielectric constant (k) (∼60). The high-k polymer is used successfully in solution processable low-voltage OTFTs as the gate insulator for the first time. Both n-channel and p-channel OTFTs based on conjugated polymers are fabricated and show carrier mobilities higher than 0.1 cm2 V−1 s−1 at an operating voltage of 3 V.