Low-voltage organic transistors based on solution processed semiconductors and self-assembled monolayer gate dielectrics

Abstract

Reduction in the operating voltage of organic transistors is of high importance for successful implementation in low-power electronic applications. Here we report on low-voltage n-channel transistors fabricated employing a combination of soluble organic semiconductors and a self-assembled gate dielectric. The high geometric capacitance of the nanodielectric allows transistor operation below 2V. Solution processing is enabled by analysis of the surface energy compatibility of the dielectric and semiconductor solutions. Electron mobilities in the range of 0.01–0.04cm2∕Vs and threshold voltages ⩽0.35V are demonstrated. The present work paves the way toward solution processable low-voltage/power, organic complementary circuits.