Measurement of heterojunction bipolar transistorthermal resistance based on a pulsed I-V system

Abstract

The thermal resistance (RTH) of power heterojunction bipolar transistors (HBTs) is determined using a pulsed I-V measurement technique. RTH has been found to vary with power dissipation and this has been attributed to the decrease in thermal conductivity of GaAs. Good agreement has been found between a theoretical model and experimental results.