Ultrathin Mo/MoN bilayer nanostructure for diffusion barrier application of advanced Cu metallization

Copper Transport in Thermal SiO2

Yosi Shacham‐Diamand, A. Dedhia, D. Hoffstetter et al. · Journal of The Electrochemical Society · 1993 · 239 citations

Engineering, Thermal Conductivity, Semiconductors +16

Comparison of the diffusion barrier properties of chemical-vapor-deposited TaN and sputtered TaN between Cu and Si

Mei‐Hui Tsai, Shuo Sun, C.E. Tsai et al. · Journal of Applied Physics · 1996 · 174 citations

Engineering, Diffusion Barrier Properties, Vacuum Device +17

Improved barrier properties of ultrathin Ru film with TaN interlayer for copper metallization

Xin-Ping Qu, Jingjing Tan, Mi Zhou et al. · Applied Physics Letters · 2006 · 103 citations

Materials Science, Materials Engineering, Material Analysis +15

The effect of density and microstructure on the performance of TiN barrier films in Cu metallization

Ki-Chul Park, Ki‐Bum Kim, Ivo J. Raaijmakers · Journal of Applied Physics · 1996 · 92 citations

Engineering, Thin Film Process Technology, Chemical Deposition +17

Superior thermal stability of Ta/TaN bi-layer structure for copper metallization

Qi Xie, Xin-Ping Qu, Jingjing Tan et al. · Applied Surface Science · 2006 · 91 citations

Materials Engineering, Materials Science, Engineering +10