Modeling of epitaxial silicon carbide deposition

A Model of Silicon Carbide Chemical Vapor Deposition

Mark D. Allendorf, Robert J. Kee · Journal of The Electrochemical Society · 1991 · 195 citations

Natural Sciences, Chemical Engineering, Materials Science +17

Growth of SiC by ?Hot-Wall? CVD and HTCVD

Olof Kordina, C. Hallin, Anne Henry et al. · physica status solidi (b) · 1997 · 127 citations

Engineering, Materials Engineering, Materials Science +15

Growth rate predictions of chemical vapor deposited silicon carbide epitaxial layers

Örjan Danielsson, Anne Henry, Erik Janzén · Journal of Crystal Growth · 2002 · 97 citations

Engineering, Materials Engineering, Materials Science +16

The analysis of mass transfer in system β-SiC–α-SiC under silicon carbide sublimation growth

D. D. Avrov, A. Bakin, S. I. Dorozhkin et al. · Journal of Crystal Growth · 1999 · 31 citations

Engineering, Materials Engineering, Materials Science +14

Kinetic approach to materials synthesis by gas-phase deposition

Sergio Carrà, Maurizio Masi · Progress in Crystal Growth and Characterization of Materials · 1998 · 26 citations

Natural Sciences, Materials Engineering, Materials Science +11