Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells

Abstract

The effect of intentional p-GaN surface roughening on the performance of c-plane InGaN/GaN solar cells was investigated. Surface roughness was introduced by growing the p-GaN at a relatively high rate and low temperature which resulted in a faceted surface with a high density of V-defects. Increasing the surface roughness led to a 69.4% increase in short circuit current density. Similar surface roughening techniques should also be applicable for increasing the extraction efficiency of InGaN/GaN light-emitting diodes.