The evolution of arsenic excess induced by thermal annealing in arsenic-rich Ga1-xAsx films

Structural properties of As-rich GaAs grown by molecular beam epitaxy at low temperatures

M. Kamińska, Z. Liliental‐Weber, E. R. Weber et al. · Applied Physics Letters · 1989 · 415 citations

Materials Science, Semiconductors, Electrical Engineering +15

Picosecond GaAs-based photoconductive optoelectronic detectors

F. W. Smith, H. Q. Le, V. Diadiuk et al. · Applied Physics Letters · 1989 · 347 citations · Full text

Photonics, Electrical Engineering, Coplanar Transmission Line +14

Investigation of disorder effects in amorphous GaAs and GaP by EXAFS

M.L. Thèye, A. Gheorghiu, H. Launois · Journal of Physics C Solid State Physics · 1980 · 59 citations

Materials Science, Amorphous Gaas, Ii-vi Semiconductor +11

Structure and orientation of As precipitates in GaAs grown at low temperature by molecular beam epitaxy

A. Claverie, Z. Liliental‐Weber · Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties · 1992 · 43 citations

Materials Science, Semiconductors, Ii-vi Semiconductor +15

Raman study of low growth temperature GaAs

T. A. Gant, H. Shen, J. R. Flemish et al. · Applied Physics Letters · 1992 · 38 citations

Semiconductors, Materials Science, Materials Engineering +12