Journal of Electronics and Control · 1962 · 25 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportDevice ModelingP-n JunctionsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsAvalanche BreakdownAvalanche GainAvalanche MultiplicationJunction BreakdownJunction ModelingP-n Junction Characteristics
ABSTRACT The multiplication of carriers generated in the space-charge layer of reverse biased silicon pn step junctions has been calculated in terms of the multiplication of electrons and holes injected into the junction. Curves are plotted for p+n and n+p junctions, and good agreement has been found with experimental curves.
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Ionization Rates for Electrons and Holes in Silicon
A. G. Chynoweth · Physical Review · 1958 · 580 citations
Avalanche Breakdown in Silicon
K. G. McKay · Physical Review · 1954 · 478 citations
Electron Multiplication in Silicon and Germanium
K. G. McKay, K. B. McAfee · Physical Review · 1953 · 326 citations
Ionization Rates for Holes and Electrons in Silicon
S. L. Miller · Physical Review · 1957 · 269 citations