IEEE Electron Device Letters · 2012 · 163 citations · 10 references
EngineeringComputer EngineeringElectrical EngineeringLow-power DesignMicroelectronicsSemiconductor DevicesCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyLow-noise Circuit DesignMemory DevicesNoise In Electronic DevicesRandom Number GenerationBias Circuit DesignComplementary Metal-oxide-semiconductor LogicHardware Random Number GeneratorsPower ConsumptionRandom Telegraph NoiseRandom-access MemoryResistive Random-access MemoryTrue Random Number Generation
A new type of true random number generator, based on the random telegraph noise of a contact-resistive random access memory device, is proposed in this letter. The random-number generator consists of only a simple bias circuit plus a comparator, leading to small circuit area and low power consumption. By realizing this generator by the 65-nm complementary metal-oxide-semiconductor logic process, the occupied area can be as low as 45 μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , demonstrating substantial saving in the circuit area.
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