Yuan Heng Tseng

High density and ultra small cell size of Contact ReRAM (CR-RAM) in 90nm CMOS logic technology and circuits

Yuan Heng Tseng, Chia-En Huang, C.-H. Kuo et al. · 2009 · 59 citations

Non-volatile Memory, Engineering, Vlsi Design +21

Electron trapping effect on the switching behavior of contact RRAM devices through random telegraph noise analysis

Yuan Heng Tseng, Wen Chao Shen, Chia-En Huang et al. · 2010 · 50 citations

Trapping/de-trapping Behavior, Electrical Engineering, Non-volatile Memory +11

Modeling of electron conduction in contact resistive random access memory devices as random telegraph noise

Yuan Heng Tseng, Wen Chao Shen, Chrong Jung Lin · Journal of Applied Physics · 2012 · 37 citations · Full text

Non-volatile Memory, Engineering, Random Telegraph Noise +16

A New High-Density and Ultrasmall-Cell-Size Contact RRAM (CR-RAM) With Fully CMOS-Logic-Compatible Technology and Circuits

Yuan Heng Tseng, Chia-En Huang, C.-H. Kuo et al. · IEEE Transactions on Electron Devices · 2010 · 22 citations

Non-volatile Memory, Engineering, New Rram Cell +17

Memristor Logic Operation Gate With Share Contact RRAM Cell

Wen Chao Shen, Yuan Heng Tseng, Y.D. Chih et al. · IEEE Electron Device Letters · 2011 · 11 citations