Chrong Jung Lin

45nm low power CMOS logic compatible embedded STT MRAM utilizing a reverse-connection 1T/1MTJ cell

Chrong Jung Lin, Sangmo Kang, Y.J. Wang et al. · 2009 · 320 citations

Hardware Security, Spintronics, Electrical Engineering +15

7.4 A 256b-wordlength ReRAM-based TCAM with 1ns search-time and 14× improvement in wordlength-energyefficiency-density product using 2.5T1R cell

Chien-Chen Lin, Jui-Yu Hung, Wen-Zhang Lin et al. · 2016 · 70 citations

Non-volatile Memory, Ternary Content-addressable Memory, Engineering +18

Challenges and Circuit Techniques for Energy-Efficient On-Chip Nonvolatile Memory Using Memristive Devices

Meng‐Fan Chang, Albert Lee, Pin-Cheng Chen et al. · IEEE Journal on Emerging and Selected Topics in Circuits and Systems · 2015 · 67 citations

Non-volatile Memory, Electrical Engineering, Read Disturbance +12

Ultra high density 3D via RRAM in pure 28nm CMOS process

Min-Che Hsieh, Yu‐Cheng Liao, Y. L. Chin et al. · 2013 · 60 citations

Engineering, Via Rram, Emerging Memory Technology +19

High density and ultra small cell size of Contact ReRAM (CR-RAM) in 90nm CMOS logic technology and circuits

Yuan Heng Tseng, Chia-En Huang, C.-H. Kuo et al. · 2009 · 59 citations

Non-volatile Memory, Engineering, Vlsi Design +21