Wen Chao Shen

A Contact-Resistive Random-Access-Memory-Based True Random Number Generator

Chien-Yuan Huang, Wen Chao Shen, Yuan-Heng Tseng et al. · IEEE Electron Device Letters · 2012 · 163 citations

Engineering, New Type, Pseudo-random Sequence +17

Electron trapping effect on the switching behavior of contact RRAM devices through random telegraph noise analysis

Yuan Heng Tseng, Wen Chao Shen, Chia-En Huang et al. · 2010 · 50 citations

Trapping/de-trapping Behavior, Electrical Engineering, Non-volatile Memory +11

High-K metal gate contact RRAM (CRRAM) in pure 28nm CMOS logic process

Wen Chao Shen, Y.D. Chih, Shyh-Shyuan Sheu et al. · 2012 · 46 citations

Cmos Logic Process, Electrical Engineering, Non-volatile Memory +14

Modeling of electron conduction in contact resistive random access memory devices as random telegraph noise

Yuan Heng Tseng, Wen Chao Shen, Chrong Jung Lin · Journal of Applied Physics · 2012 · 37 citations · Full text

Non-volatile Memory, Engineering, Random Telegraph Noise +16

28-nm 2T High-<formula formulatype="inline"><tex Notation="TeX">$K$</tex></formula> Metal Gate Embedded RRAM With Fully Compatible CMOS Logic Processes

Wen Chao Shen, Chun Hsiung Wu, Yue‐Der Chih et al. · IEEE Electron Device Letters · 2013 · 22 citations

Non-volatile Memory, Resistive Ram, Engineering +22