Wen Chao Shen

A Contact-Resistive Random-Access-Memory-Based True Random Number Generator

Chien-Yuan Huang, Wen Chao Shen, Yuan-Heng Tseng et al. · IEEE Electron Device Letters · 2012 · 163 citations

Engineering, Computer Engineering, Electrical Engineering +17

Electron trapping effect on the switching behavior of contact RRAM devices through random telegraph noise analysis

Yuan Heng Tseng, Wen Chao Shen, Chia-En Huang et al. · 2010 · 50 citations

Engineering, Electrical Engineering, Materials Science +17

High-K metal gate contact RRAM (CRRAM) in pure 28nm CMOS logic process

Wen Chao Shen, Y.D. Chih, Shyh-Shyuan Sheu et al. · 2012 · 46 citations

Engineering, Computer Engineering, Electrical Engineering +13

Modeling of electron conduction in contact resistive random access memory devices as random telegraph noise

Yuan Heng Tseng, Wen Chao Shen, Chrong Jung Lin · Journal of Applied Physics · 2012 · 37 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

28-nm 2T High-<formula formulatype="inline"><tex Notation="TeX">$K$</tex></formula> Metal Gate Embedded RRAM With Fully Compatible CMOS Logic Processes

Wen Chao Shen, Chun Hsiung Wu, Yue‐Der Chih et al. · IEEE Electron Device Letters · 2013 · 22 citations

Engineering, Computer Engineering, Electrical Engineering +17