Yukihiro Sakotsubo

Resistance Controllability of $\hbox{Ta}_{2} \hbox{O}_{5}/\hbox{TiO}_{2}$ Stack ReRAM for Low-Voltage and Multilevel Operation

Masayuki Terai, Yukihiro Sakotsubo, Setsu Kotsuji et al. · IEEE Electron Device Letters · 2010 · 100 citations

Engineering, Memory Design, Multilevel Operation +11

Memory-State Dependence of Random Telegraph Noise of $ \hbox{Ta}_{2}\hbox{O}_{5}/\hbox{TiO}_{2}$ Stack ReRAM

Masayuki Terai, Yukihiro Sakotsubo, Y. Saito et al. · IEEE Electron Device Letters · 2010 · 35 citations

Electrical Engineering, Engineering, Physics +7

Physical Model for Reset State of Ta₂O₅/TiO₂-Stacked Resistance Random Access Memory

Yukihiro Sakotsubo, Masayuki Terai, Setsu Kotsuji et al. · Japanese Journal of Applied Physics · 2010 · 31 citations

Engineering, Emerging Memory Technology, Computer Architecture +17

Effect of bottom electrode of ReRAM with Ta<inf>2</inf>O<inf>5</inf>/TiO<inf>2</inf> stack on RTN and retention

Masayuki Terai, Yukihiro Sakotsubo, Y. Saito et al. · 2009 · 24 citations

Materials Science, Materials Engineering, Bottom Electrode +6

Tunneling spectroscopy of isolated gold clusters grown on thiol/dithiol mixed self-assembled monolayers

Yukihiro Sakotsubo, Taizo Ohgi, Daisuke Fujita et al. · Physica E Low-dimensional Systems and Nanostructures · 2005 · 18 citations

Materials Science, Engineering, Tunneling Microscopy +10